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1. product profile 1.1 general description 90 w ldmos power transistor for base station applications at frequencies from 1800 mhz to 2000 mhz, designed for operat ion at 1427 mhz to1525 mhz, 1805 mhz to 1880 mhz and 2110 mhz to 2170 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (1427 mhz to1525 mhz, 1805 mhz to 1880 mhz and 2110 mhz to 2170 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier applications in the frequency bands of 1427 mhz to 1525 mhz, 1805 mhz to 1880 mhz and 2110 mhz to 2170 mhz. BLF7G20L-90P; blf7g20ls-90p power ldmos transistor rev. 2 ? 20 october 2011 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class- ab production test circuit. mode of operation f i dq v ds p l(av) g p ? d acpr 400k acpr 600k evm rms (mhz) (ma) (v) (w) (db) (%) (dbc) (dbc) (%) cw 1805 to 1880 550 28 84 19 54 - - - gsm edge 1805 to 1880 550 28 40 19.5 41 ? 61 ? 74 2.5
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 2 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol BLF7G20L-90P (sot1121a) 1drain1 2drain2 3gate1 4gate2 5source [1] blf7g20ls-90p (sot1121b) 1drain1 2drain2 3gate1 4gate2 5source [1] 2 4 5 3 1 4 3 5 1 2 sym117 4 5 3 21 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF7G20L-90P - flanged ldmost ceramic package; 2 mounting holes; 4 leads sot1121a blf7g20ls-90p - earless flanged ldmost ceramic package; 4 leads sot1121b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v i d drain current - 18 a t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 3 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =90w 0.49 k/w table 6. characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.5ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 50 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 2 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 8.2 9.5 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 200 na g fs forward transconductance v ds =10v; i d =2.5a - 3.8 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =1.75a -0.28- ? table 7. application information f = 1805 mhz to 1880 mhz; rf performance at v ds = 28 v; i dq = 550 ma; t case = 25 ? c; 2 sections combined unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit mode of operation: gsm edge; p l(av) = 40 w g p power gain 18.3 19.5 - db rl in input return loss - ? 15 ? 8db ? d drain efficiency 38 41 - % acpr 400k adjacent channel power ratio (400 khz) - ? 61 ? 58 dbc acpr 600k adjacent channel power ratio (600 khz) - ? 74 ? 70.5 dbc evm rms rms edge signal distortion error - 2.5 3.8 % evm m peak edge signal distortion error - 8 12.5 % mode of operation: cw; p l(av) = 84 w g p power gain 17.8 19 - db ? d drain efficiency 51 54 - %
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 4 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 7.1 ruggedness in class-ab operation the BLF7G20L-90P and blf7g20ls-90p are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =550ma; p l = 90 w (cw), f = 1805 mhz, v ds =28v; i dq =380ma; p l = 40 w (cw, half device), f = 2110 mhz, v ds =28v; i dq =380ma; p l = 55 w (cw pulse, 10 %, 100 ? s, halve device), f = 1427 mhz. 7.2 one-tone cw v ds = 28 v; i dq = 550 ma; f = 1880 mhz. fig 1. one-tone cw power gain and drain efficiency as function of load power; typical values p l (w) 0 100 80 40 60 20 001aal867 22 g p (db) g p d 20 18 16 15 17 19 21 70 50 30 10 0 20 40 60 d (%)
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 5 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 7.3 two-tone cw 7.4 gsm edge v ds = 28 v; i dq = 550 ma; f 1 = 1879.95 mhz; f 2 = 1880.05 mhz. v ds = 28 v; i dq = 550 ma; f 1 = 1879.95 mhz; f 2 = 1880.05 mhz. fig 2. two-tone cw power gain and drain efficiency as function of load power; typical values fig 3. two-tone cw intermodulation distortion as a function of load power; typical values p l (w) 70 50 10 60 40 20 030 001aal868 g p (db) 15 d (%) 16 17 18 19 20 21 22 0 10 20 30 40 50 60 70 g p d p l (w) 70 50 10 60 40 20 030 001aal869 ?40 ?60 ?20 0 imd (dbc) ?80 imd3 imd5 imd7 v ds = 28 v; i dq = 550 ma; f = 1880 mhz. v ds = 28 v; i dq = 550 ma; f = 1880 mhz. fig 4. gsm edge power gain and drain efficiency as function of load power; typical values fig 5. gsm edge acpr at 400 khz and at 600 khz as function of load power; typical values p l (w) 70 50 10 60 40 20 030 001aal870 g p (db) 14 d (%) 15 16 17 18 19 20 21 0 10 20 30 40 50 60 70 g p d p l (w) 020406070 50 30 10 001aal871 ?70 ?60 ?50 acpr (dbc) ?80 acpr 400k acpr 600k
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 6 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 7.5 single carrier is-95 single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on the ccdf. channel bandwidth is 1.2288 mhz. v ds = 28 v; i dq = 550 ma; f = 1880 mhz. fig 6. gsm edge rms edge and peak edge as function of load power; typical values p l (w) 020406070 50 30 10 001aal872 evm (%) 0 5 10 15 20 25 evm m evm rms v ds = 28 v; i dq = 600 ma; f = 1880 mhz. v ds = 28 v; i dq = 600 ma; f = 1880 mhz. fig 7. single carrier is-95 power gain and drain efficiency as function of load power; typical values fig 8. single carrier is-95 acpr at 885 khz and at 1980 khz as function of load power; typical values p l (w) 048 32 16 001aal873 17 19 21 g p (db) d (%) 15 20 40 60 0 d g p 001aal874 p l (w) 048 32 16 ?60 ?50 ?70 ?40 ?30 acpr (dbc) ?80 acpr 885k acpr 1980k
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 7 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 7.6 single carrier w-cdma 3gpp; test model 1; 64 dpch; par = 7.2 d b at 0.01 % probability on ccdf. channel bandwidth is 3.84 mhz. v ds = 28 v; i dq = 600 ma; f = 1880 mhz. fig 9. single carrier is-95 peak-to-average power ratio as a function of load power; typical values p l (w) 048 32 16 001aal875 11 pa r 4 5 6 7 8 9 10 v ds = 28 v; i dq = 600 ma; f = 1880 mhz. v ds = 28 v; i dq = 600 ma; f = 1880 mhz. fig 10. single carrier w-cdma power gain and drain efficiency as function of load power; typical values fig 11. single carrier w-cdma acpr at 5 mhz and at 10 mhz as function of load power; typical values p l (w) 020406070 50 30 10 001aal876 17 19 21 g p (db) d (%) 15 20 40 60 0 g p d p l (w) 020406070 50 30 10 001aal877 ?52 ?36 ?20 acpr (dbc) ?68 acpr 5m acpr 10m
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 8 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 7.7 test circuit [1] american technical ce ramics type 100a or capacitor of same quality. [2] tdk or capacitor of same quality. [3] american technical ce ramics type 100b or capacitor of same quality. table 8. list of components for test circuit see figure 12 . component description value remarks c1, c2, c3 multilayer ceramic chip capacitor 24 pf [1] c4, c5 multilayer cerami c chip capacitor 4.7 ? f [2] c6, c7, c8 multilayer ceramic chip capacitor 11 pf [3] c9, c10 multilayer ceramic chip capacitor 10 ? f [2] c11 electrolytic capacitor 470 ? f; 63 v r1, r2 smd resistor 12 ? philips 1206 printed-circuit board (pcb): taconic rf35; ? r = 3.5 f/m; thickness = 0.76 mm; thickness copper plating = 35 ? m. see table 8 for a list of components. fig 12. component layout for class-ab production test circuit 001aal878 c4 r1 c1 r2 c2 c6 c9 c11 c5 c3 c7 c8 c10 input rev 3 BLF7G20L-90P output rev 3 BLF7G20L-90P
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 9 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 7.8 impedance information table 9. typical impedance typical values valid for both section in parallel unless otherwise specified. f z s z l mhz ? ? 1800 1.0 ? j3.3 2.8 ? j2.7 1840 1.2 ? j3.3 2.8 ? j2.5 1880 1.1 ? j3.4 2.7 ? j2.4 fig 13. definition of transistor impedance 001aal831 gate drain z s z l
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 10 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 8. package outline fig 14. package outline sot1121a references outline version european projection issue date iec jedec jeita sot1121a 09-10-12 10-02-02 flanged ldmost ceramic package; 2 mounting holes; 4 leads sot1121a e 1 q e c d a f d 1 a b c q e h 1 u 1 u 2 h c w 2 b a w 1 b p 2 1 4 5 3 sot1121a_po unit (1) mm max nom min 4.75 3.45 3.94 3.68 0.18 0.10 20.02 19.61 19.96 19.66 9.53 9.27 1.14 0.89 19.94 18.92 3.38 3.12 9.91 9.65 0.25 a dimensions bcdd 1 ee 1 9.53 9.27 fhh 1 12.83 12.57 pq (2) 1.70 1.45 q 27.94 u 1 34.16 33.91 u 2 w 1 0.51 inches max nom min 0.187 0.136 0.155 0.145 0.007 0.004 8.89 e 0.35 0.788 0.772 0.786 0.774 0.375 0.365 0.045 0.035 0.785 0.745 0.133 0.123 0.39 0.38 0.01 0.375 0.365 0.505 0.495 0.067 0.057 1.1 1.345 1.335 0.02 w 2 0 5 10 mm scale note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body.
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 11 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor fig 15. package outline sot1121b references outline version european projection issue date iec jedec jeita sot1121b sot1121b_po 09-10-12 09-12-14 unit (1) mm max nom min 4.75 3.45 3.94 3.68 0.18 0.08 20.02 19.61 19.96 19.66 9.53 9.27 1.14 0.89 19.94 18.92 9.91 9.65 a dimensions note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. earless flanged ldmost ceramic package; 4 leads sot1121b bcdd 1 ee 1 9.53 9.27 fhh 1 12.83 12.57 q 1.70 1.45 u 1 20.70 20.45 u 2 inches max nom min 0.187 0.136 0.155 0.145 0.007 0.003 8.89 e 0.35 0.788 0.772 0.786 0.774 0.375 0.365 0.045 0.035 0.785 0.745 0.39 0.38 0.375 0.365 0.505 0.495 0.067 0.057 0.815 0.805 0.25 0.01 0.51 0.02 w 2 w 3 0 5 10 mm scale d h 1 u 1 a f d 1 d e 1 u 2 h w 3 d w 2 q e c 5 2 1 4 3 e b
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 12 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 9. abbreviations 10. revision history table 10. abbreviations acronym description 3gpp 3rd generation partnership project cw continuous wave ccdf complementary cumulative distribution function dpch dedicated physical channel edge enhanced data rates for gsm evolution esd electrostatic discharge gsm global system for mobile communications is-95 interim standard 95 ldmos laterally diffused metal oxide semiconductor ldmost laterally diffused metal oxide semiconductor transistor par peak-to-average power ratio rf radio frequency smd surface mounted device vswr voltage standing wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes BLF7G20L-90P_7g20ls-90p v.2 20111020 product data sheet - BLF7G20L-90P_7g20ls- 90p v.1 modifications: ? section 1.1 on page 1 : general description changed ? section 1.2 on page 1 : designed for broadband operation changed ? section 1.3 on page 1 : description changed ? section 7.1 on page 4 : conditions changed BLF7G20L-90P_7g20ls-90p v.1 20100428 product data sheet - -
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 13 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF7G20L-90P_7g20ls-90p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2 ? 20 october 2011 14 of 15 nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF7G20L-90P; blf7g20ls-90p power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 october 2011 document identifier: BLF7G20L-90P_7g20ls-90p please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 4 7.2 one-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 two-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4 gsm edge . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.5 single carrier is-95 . . . . . . . . . . . . . . . . . . . . . . 6 7.6 single carrier w-cdma . . . . . . . . . . . . . . . . . . 7 7.7 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.8 impedance information . . . . . . . . . . . . . . . . . . . 9 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12 contact information. . . . . . . . . . . . . . . . . . . . . 14 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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